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| Power Transistors 2SB944 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1269 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 Unit: mm 4.20.2 s Features q q q q Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw (TC=25C) Ratings -130 -80 -7 -8 -4 35 2 150 -55 to +150 Unit V V V A A W C C 7.50.2 16.70.3 3.10.1 4.0 1.40.1 1.30.2 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 14.00.5 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf IC = -1A, IB1 = - 0.1A, IB2 = 0.1A Conditions VCB = -100V, IE = 0 VEB = -5V, IC = 0 IC = -10mA, IB = 0 VCE = -2V, IC = - 0.1A VCE = -2V, IC = -1A IC = -3A, IB = - 0.15A IC = -3A, IB = - 0.15A VCE = -10V, IC = - 0.5A, f = 10MHz 30 0.15 0.8 0.15 -80 45 90 260 - 0.5 -1.5 V V MHz s s s min typ max -10 -50 Unit A A V FE2 Rank classification Q 90 to 180 P 130 to 260 Rank hFE2 Note: Ordering can be made by the common rank (PQ rank hFE2 = 90 to 260) in the rank classification. 1 Power Transistors PC -- Ta 50 -6 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25C IB=-100mA -90mA -80mA -70mA -60mA -50mA -40mA -3 -30mA -2 -20mA 2SB944 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) -100 IC/IB=20 -30 -10 -3 -1 25C TC=100C -25C VCE(sat) -- IC Collector power dissipation PC (W) Collector current IC (A) 40 -5 -4 30 20 (1) - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.3 - 0.1 10 (3) (4) 0 0 20 40 60 -8mA -1 -5mA 0 (2) 80 100 120 140 160 0 -2 -4 -6 -8 -10 -1 -3 -10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC -100 10000 IC/IB=20 hFE -- IC 10000 VCE=-2V 3000 1000 300 100 30 10 3 fT -- IC VCE=-10V f=10MHz TC=25C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE -10 -3 -1 TC=-25C 100C 25C 1000 300 100 -25C 30 10 3 1 - 0.01 - 0.03 - 0.1 - 0.3 25C TC=100C - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 Transition frequency fT (MHz) -1 -3 -10 -30 3000 -1 -3 -10 1 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob -- VCB 10000 100 IE=0 f=1MHz TC=25C 30 ton, tstg, tf -- IC Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=-IB2) VCC=-50V TC=25C Area of safe operation (ASO) -100 -30 Non repetitive pulse TC=25C ICP IC -3 -1 DC 10ms 1ms t=0.5ms Collector output capacitance Cob (pF) 3000 1000 300 100 30 10 3 1 - 0.1 - 0.3 Switching time ton,tstg,tf (s) 10 3 1 0.3 0.1 0.03 0.01 Collector current IC (A) -10 tstg ton tf - 0.3 - 0.1 - 0.03 - 0.01 -1 -1 -3 -10 -30 -100 0 - 0.8 -1.6 -2.4 -3.2 -3 -10 -30 -100 -300 -1000 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) -- t 103 (1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink (1) 2SB944 Thermal resistance Rth(t) (C/W) 102 10 (2) 1 10-1 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
Price & Availability of 2SB944
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